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IRFM450
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050)
N-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
* HERMETICALLY SEALED ISOLATED PACKAGE * AVALANCHE ENERGY RATING
30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
1
2
3
20.07 (0.790) 20.32 (0.800)
500V 12A 0.415
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
* SIMPLE DRIVE REQUIREMENTS
3.81 (0.150) BSC
TO-254AA - Metal Package
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
* ALSO AVAILABLE IN TO-220 METAL AND SURFACE MOUNT PACKAGES * EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL RJC RCS RJA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature measured 1/16" (1.6mm) from case for 10 sec. Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction to Ambient (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 20V 12A 8A 48A 150W 1.2W/C 750mJ 12A 15mJ 3.5V/ns -55 to 150C 300C 0.83C/W 0.21C/W 48C/W
Notes 1) Repetitive Rating - Pulse width limited by Maximum Junction Temperature 2) @ VDD = 50V , L 9.4mH , RG = 25 , Peak IL = 12A , Starting TJ = 25C 3) @ ISD 12A , di/dt 130A/s , VDD BVDSS , TJ 150C , Suggested RG = 2.35
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
IRFM450
ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance
2
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS
2
Min.
500
Typ.
Max.
Unit
V
ID = 1mA
BVDSS Temperature Coefficient of
Reference to 25C ID = 8A ID = 12A ID = 250A IDS = 8A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V 2 6.5
0.68 0.415 0.515 4 25 250 100 -100 2700 600 240 12 55 5 27 120 19 70 35 190 170 130 12 48
V / C V S( A nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss CDC Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance
VDS 15V VGS = 0
Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain - Case Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn- On Delay Time Rise Time Turn-Off Delay Time Fall Time
VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 12A VDS = 0.5BVDSS VDD = 250V ID = 12A RG = 2.35
pF
nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
1
A V ns C
Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn-On Time
2
IS = 12A VGS = 0 IF = 12A
TJ = 25C TJ = 25C Negligible 8.7 8.7
1.7 1600 14
di / dt 100A/s VDD 50V
PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die Internal Source Inductance
Measured from 6mm down source lead to source bond pad
nH
Notes 1) Repetitive Rating - Pulse width limited by Maximum 2) Pulse Test: Pulse Width 300s, 2% Junction Temperature * IS Current limited by pin diameter.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95

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